IBM and AMD Create First 22nm SRAM Cell

arcticstoat notes an announcement from IBM that, along with technology partners, they have produced the first working sample of a SRAM cell built on a 22nm fabrication process. According to the article, this represents the next generation after 32nm process chips and won't be in products for some years. "The technology was developed with several partners, including AMD, Toshiba, STMicroelectronics and Freescale, as well as the College of Nanoscale Science and Engineering, where IBM performs a lot of its semiconductor research. IBM says that the cell's development involved 'novel fabrication processes,' including high-NA immersion lithography..., high-K metal gate stacks, extremely thin silicide, damascene copper contacts, and advanced activation techniques."

Read more of this story at Slashdot.